Photon Detection Si and InGaAs APD Preamplifier Modules Key Features Excelitas’ C30659-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities. Excelitas Technologies’ C30659 Series includes a Si or InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation. The Si APDs used in these devices are the same as used in Excelitas’ C30817EH, C30902EH, C30954EH and C30956EH products, while the InGaAs APDs are used in the C30645EH and C30662EH products. These detectors provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The preamplifier section of the module uses a very low noise GaAs FET front end designed to operate at higher transimpedance than Excelitas’ regular C30950 Series. The C30659 is pin-to-pin compatible with the C30950 Series with a negative output. An emitter follower is used as an output buffer stage. To obtain the wideband characteristics, the output of these devices should be capacitively- or AC-coupled to a 50 Ω termination. The module must not be DC-coupled to loads of less than 2,000 Ohms. For field use, it is recommended that a temperature-compensated HV supply be employed to maintain a constant responsivity over temperature. Excelitas’ InGaAs C30659-1550E Preamplifier Modules, with 1550 nm peak response, are designed to exhibit higher damage thresholds, thus providing greater resilience when exposed to high optical power densities. Customization of the C30659 Series of APD Preamplifier Modules is available to meet your specific design challenges; modifications include bandwidth and gain optimization, use of different APDs, FC-connectorized packaging. www.excelitas.com C30659 Series-Rev.1.1-2013.06 Page 1 of 10 System bandwidths of 50 MHz and 200MHz Ultra low noise equivalent power (NEP) Spectral response range: – With Si APD: 400 to 1100 nm – With InGaAs APD: 1100 to 1700 nm Typical power consumption: 150 mW ±5 V amplifier operating voltages 50 Ω AC load capability (AC-Coupled) Hermetically-sealed TO-8 package High reliability Fast overload recovery Pin-to-pin compatible with the C30950 Series Light entry angle, over 130° Model 1550E exhibits enhanced damage threshold RoHS-compliant Applications Range finding LIDAR Confocal microscopy

Si and InGaAs APD Preamplifier Modules Table 1. Performance Specifications − C30659-900 Models (900 nm peak response Si APD) Test conditions: Case temperature = 22˚C, Vamp = ±5 V, HV = Vop (see Note 1), RL = 50 Ω AC coupled C30659-900-R8AH (C30817EH APD) Detector Type Parameter Active diameter Active area Nominal field of view α (see Figure 8) Nominal field of view α’ (see Figure 8) Bandwidth range Temperature coefficient of Vop for constant gain Temperature sensor sensitivity (Note 2) Responsivity at 830 nm at 900 nm Rf (Internal feedback resistor) Noise equivalent power (NEP) (Note 3) Average...

Si and InGaAs APD Preamplifier Modules Table 2. Performance Specifications − C30659-1060 Models (1060 nm optimized response Silicon APD) Test conditions: Case temperature = 22˚C, Vamp = ±5 V, HV = Vop (see Note 1), RL = 50 Ω AC coupled C30659-1060-3AH (C30956EH APD) Detector type Parameter Active diameter Active area Nominal field of view α (see Figure 8) Nominal field of view α’ (see Figure 8) Bandwidth range Temperature coefficient of Vop for constant gain Temperature sensor sensitivity (Note 2) Responsivity at 900 nm at 1060 nm Rf (Internal feedback resistor) Noise equivalent power (NEP) (Note...

Si and InGaAs APD Preamplifier Modules Table 3. Performance Specifications − C30659-1550/1550E Models (1550 nm peak response InGaAs APD) Test conditions: Case temperature = 22˚C, Vamp = ±5 V, HV = Vop (see Note 1), RL = 50 Ω AC coupled Detector type Parameter Active diameter Active area Nominal field of view α (see Figure 8) Nominal field of view α’ (see Figure 8) Bandwidth range Temperature coefficient of Vop for constant gain Temperature sensor sensitivity (Note 2) Responsivity at 1300 nm at 1550 nm Rf (Internal feedback resistor) Noise equivalent power (NEP) (Note 3) Average from 100 kHz to...

Si and InGaAs APD Preamplifier Modules Table 4. Absolute - Maximum Ratings, Limiting Values The operating voltage (Vop) must remain below the breakdown voltage (Vbr), these values are worst-case estimates. As demonstrated in laboratory conditions. Based on 0.5 W electrical power on the high voltage (HV) supply. Test with 50 ns pulse width. Tested at 1060 nm, 10 ns pulse width and 1 kHz pulse repetition rate. Figure 1. Schematic Block Diagram - C30659 Series

Si and InGaAs APD Preamplifier Modules Figure 2. Typical Spectral Responsivity 500 Figure 3. Typical Responsivity as a Function of Operating Voltage – C30659-(900/1060) Series Operating Voltage [V] www.excelitas.com

Si and InGaAs APD Preamplifier Modules Figure 4. Typical Responsivity as a function of Operating Voltage – C30659-(1550/1550E) Series 10000 C30659-1550/1550E-R2AH Figure 5. Typical Noise and Frequency response curves 1 Normalized frequency response [dB] Normalized output noise voltage [V] Output voltage noise normalization is calculated using the following formula: f 3 dB

Si and InGaAs APD Preamplifier Modules Figure 6. Typical variation of responsivity as a function of temperature C30659-900-R8AH responsivity at 900 nm

Si and InGaAs APD Preamplifier Modules Figure 7. Mechanical Characteristics - C30659 Series - reference dimensions shown in inches [mm] DETECTOR PLANE [MODEL DEPENDENT] DIMENSIONS ARE IN INCHES [MILLIMETERS] Figure 8. Approximate field of view - C30659 Series For incident radiation at angles < a/2, the photosensitive surface is totally illuminated. For incident radiation at angles > a/2, but < a'/2, the photosensitive surface is partially illuminated. OUTER WINDOW