Photon Detection Short Wavelength Enhanced Silicon Avalanche Photodiode Key Features The C30739ECERH large area silicon avalanche photodiode (APD) is intended for use in a wide variety of broadband low light level applications covering the spectral range from below 400 to over 700 nm. The device is designed to have enhanced short wavelength responsivity with quantum efficiency typically exceeding 75% at 430 nm. In addition, this large area APD is optimized for low noise and low capacitance (60 pF). Operation at an avalanche gain of up to M = 400 at 430 nm is feasible with a special high gain version. The standard ceramic carrier package allows for easy handling and coupling to scintillating crystals such as LSO and BGO. Combined with the superior short wavelength responsivity, it makes this APD ideal in demanding high volume applications such as Positron Emission Tomography (PET). While the devices are warranted over the entire specification, customers are welcome to discuss their custom requirements to accommodate special design, packaging or testing needs. Large area silicon APD Short Wavelength enhanced responsivity High quantum efficiency (75%) at short wavelength(430 nm) Easy coupling to scintillating crystals Non-magnetic package Custom packaging available Excellent timing resolution RoHS compliant Molecular imaging (PET) Nuclear medicine Fluorescence detection High energy physics Safety radiation detection Optical tomography Environmental monitoring

Short Wavelength Enhanced Silicon Avalanche Photodiode Table 1 – Package and Chip Dimensions Parameter Package Size Chip size Active area Table 2 – Electrical Characteristics, at TA = 22 °C; at typical dV Symbol C30739ECERH-2 (high gain version) Operating Voltage defines relation of operating voltage Vop to breakdown voltage Vbr Gain at Vop Quantum Efficiency Temp. Coefficient for constant gain Capacitance Rise Time Dark Current Noise Current Table 3 – Maximum ratings Parameter Operating Temperature Storage Temperature Maximum Humidity (non-condensing)

Short Wavelength Enhanced Silicon Avalanche Photodiode Bias (volts) —•—Dark noise (pA/sqrt(Hz Electrical properties

Short Wavelength Enhanced Silicon Avalanche Photodiode ACTIVE AREA OPTICAL GRADE EPOXY SERIAL NUMBER- 3. PINS TO BE MATL: OFC COPPER, Ni/Au PLATED RoHS Compliance The C30739ECERH Si APD is designed and built to be fully compliant with the European Union Directive 2011/65/EU - Restriction of the use of certain Hazardous Substances (RoHS) in Electrical and Electronic equipment. A standard 12-month warranty following shipment applies. About Excelitas Technologies Excelitas Technologies is a global technology leader focused on delivering innovative, customized solutions to meet the lighting, detection...